? semiconductor components industries, llc, 2000 may, 2000 rev. 3 1 publication order number: mac4dhm/d preferred device
silicon bidirectional thyristors designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. ? small size surface mount dpak package ? passivated die for reliability and uniformity ? fourquadrant triggering ? blocking voltage to 600 v ? onstate current rating of 4.0 amperes rms at 93 c ? low level triggering and holding characteristics ? device marking: device type with am'' truncated, e.g., mac4dhm: ac4dhm, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 110 c, sine wave, 50 to 60 hz, gate open) mac4dhm v drm, v rrm 600 volts onstate rms current (full cycle sine wave, 60 hz, t c = 93 c) i t(rms) 4.0 amps peak non-repetitive surge current (one full cycle, 60 hz, t j = 110 c) i tsm 40 amps circuit fusing consideration (t = 8.3 msec) i 2 t 6.6 a 2 sec peak gate power (pulse width 10 sec, t c = 93 c) p gm 0.5 watts average gate power (t = 8.3 msec, t c = 93 c) p g(av) 0.1 watts peak gate current (pulse width 10 sec, t c = 93 c) i gm 0.2 amps peak gate voltage (pulse width 10 sec, t c = 93 c) v gm 5.0 volts operating junction temperature range t j 40 to 110 c storage temperature range t stg 40 to 150 c (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. triacs 4.0 amperes rms 600 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mac4dhmt4 dpak 369a 16mm tape and reel (2.5k/reel) mac4dhm1 dpak 369 http://onsemi.com 75 units/rail dpak case 369 style 6 1 2 3 4 dpak case 369a style 6 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 mt1 g mt2
mac4dhm http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance e junction to case thermal resistance e junction to ambient thermal resistance e junction to ambient (1) r jc r ja r ja 3.5 88 80 c/w maximum lead temperature for soldering purposes (2) t l 260 c (1) surface mounted on minimum recommended pad size. (2) 1/8 from case for 10 seconds. electrical characteristics (t j = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (v d = rated v drm , v rrm ; gate open) t j = 25 c t j = 110 c i drm, i rrm e e e e 0.01 2.0 ma on characteristics peak onstate voltage (1) (i tm = 6.0 a) v tm e 1.3 1.6 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+) mt2(+), g() mt2(), g() mt2(), g(+) i gt e e e e 1.8 2.1 2.4 4.2 5.0 5.0 5.0 10 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+) mt2(+), g() mt2(), g() mt2(), g(+) v gt 0.5 0.5 0.5 0.5 0.62 0.57 0.65 0.74 1.3 1.3 1.3 1.3 volts gate nontrigger voltage (continuous dc) (v d = 12 v, r l = 100 , t j = 110 c) all four quadrants v gd 0.1 0.4 e volts holding current (v d = 12 v, gate open, initiating current = 200 ma) i h e 1.5 15 ma latching current mt2(+), g(+) (v d = 12 v, i g = 5.0 ma) mt2(+), g() (v d = 12 v, i g = 5.0 ma) mt2(), g() (v d = 12 v, i g = 5.0 ma) mt2(), g(+) (v d = 12 v, i g = 10 ma) i l e e e e 1.75 5.2 2.1 2.2 10 10 10 10 ma dynamic characteristics characteristic symbol min typ max unit rate of change of commutating current (v d = 200 v, i tm = 1.8 a, commutating dv/dt = 1.0 v/ sec, t j = 110 c, f = 250 hz, cl = 5.0 fd, ll = 80 mh, rs = 56 , cs = 0.03 fd) with snubber see figure 11 di/dt(c) e 3.0 e a/ms critical rate of rise of offstate voltage (v d = 0.67 x rated v drm , exponential waveform, gate open, t j = 110 c) dv/dt 20 e e v/ s (1) pulse test: pulse width 2.0 msec, duty cycle 2%.
mac4dhm http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 () i gt gate (+) mt2 ref mt1 (+) i gt gate () mt2 ref mt1 () i gt gate () mt2 ref mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt + i gt all polarities are referenced to mt1. with inphase signals (using standard ac lines) quadrants i and iii are used.
mac4dhm http://onsemi.com 4 figure 1. rms current derating figure 2. onstate power dissipation figure 3. onstate characteristics figure 4. transient thermal response figure 5. typical gate trigger current versus junction temperature figure 6. typical gate trigger voltage versus junction temperature 2.5 4.0 0 i t(rms) , rms onstate current (amps) 110 105 100 i t(rms) , rms onstate current (amps) 3.0 4.0 0 4.0 2.0 1.0 0 4.0 0 v t , instantaneous onstate voltage (volts) 100 10 1.0 0.1 t, time (ms) 1.0 0.1 1.0 0.1 0.01 3.5 25 20 40 t j , junction temperature ( c) 8.0 3.0 2.0 0 t j , junction temperature ( c) 25 65 40 0.8 0.6 0.2 20 5.0 t c , maximum allowable case temperature ( c) p i r (t) , transient resistance (normalized) 95 90 0.5 1.0 1.5 2.0 3.0 3.5 1.0 2.0 3.0 5.0 6.0 1.0 0.5 3.0 10 100 1000 10 k , gate trigger current (ma) i gt 50 110 65 4.0 5.0 110 35 50 0.4 v gt , gate trigger voltage (volts) , average power dissipation (watts) (av) , instantaneous onstate current (amps) t 80 5.0 dc 180 120 90 60 = 30 dc 180 120 90 60 typical @ t j = 25 c maximum @ t j = 25 c maximum @ t j = 110 c z jc(t) = r jc(t) r(t) q3 q2 q1 q3 q2 q1 a a = conduction angle a a = conduction angle = 30 1.0 1.0 2.5 3.5 0.5 1.5 2.5 2.0 1.5 10 35 95 6.0 7.0 q4 10 95 80 q4
mac4dhm http://onsemi.com 5 figure 7. typical holding current versus junction temperature figure 8. typical latching current versus junction temperature figure 9. minimum exponential static dv/dt versus gatemt1 resistance 65 110 40 t j , junction temperature ( c) 2.0 t j , junction temperature ( c) 20 110 40 4.0 2.0 0 1000 10 k 100 gatemt1 resistance (ohms) 40 30 20 15 5 i h , holding current (ma) i static dv/dt (v/ s) 1.0 0 25 5.0 20 50 95 25 5.0 8.0 10 12 , latching current (ma) l 4.0 3.0 5.0 80 50 65 mt2 positive mt2 negative q2 q3 q1 v d = 400 v t j = 110 c mac4dhm 6.0 10 35 80 10 35 95 q4 figure 10. typical critical rate of rise of commutating voltage 1.0 0 di/dt(c), rate of change of commutating current (a/ms) 10 1.0 0.1 commutating voltage (v/ s) 2.0 3.0 v pk = 400 v 100 c 90 c t j = 110 c t w v drm (di/dt) c = 6f i tm 1000 f = 1 2 t w dv/dt(c), critical rate of rise of 4.0 5.0 6.0 10 25 35 figure 11. simplified test circuit to measure the critical rate of rise of commutating current (di/dt) c l l 1n4007 200 v + measure i charge control charge trigger non-polar c l 51 mt2 mt1 1n914 g trigger control 200 v rms adjust for i tm , 60 hz v ac note: component values are for verification of rated (di/dt) c . see an1048 for additional information. r s adjust for di/dt (c) c s
mac4dhm http://onsemi.com 6 minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. dpak 0.190 4.826 0.100 2.54 0.063 1.6 0.165 4.191 0.118 3.0 0.243 6.172 mm inches
mac4dhm http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27 style 6: pin 1. mt1 2. mt2 3. gate 4. mt2 dpak case 36907 issue l d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 0.51 v 0.030 0.050 0.77 1.27 z 0.138 3.51 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 6: pin 1. mt1 2. mt2 3. gate 4. mt2 dpak case 369a13 issue z
mac4dhm http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mac4dhm/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
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